This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved. The identifiability analysis of the parameters of deep centers is performed and the fitting of the model to experimental data is done by using the genetic optimization algorithm. Results of numerical experiments are presented.
@article{bwmeta1.element.doi-10_2478_s11533-013-0226-8,
author = {Natalija Tumanova and Raimondas \v Ciegis and Me\v cislavas Meil\=unas},
title = {Numerical analysis of nonlinear model of excited carrier decay},
journal = {Open Mathematics},
volume = {11},
year = {2013},
pages = {1140-1152},
zbl = {1278.82067},
language = {en},
url = {http://dml.mathdoc.fr/item/bwmeta1.element.doi-10_2478_s11533-013-0226-8}
}
Natalija Tumanova; Raimondas Čiegis; Mečislavas Meilūnas. Numerical analysis of nonlinear model of excited carrier decay. Open Mathematics, Tome 11 (2013) pp. 1140-1152. http://gdmltest.u-ga.fr/item/bwmeta1.element.doi-10_2478_s11533-013-0226-8/
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