Some new mathematical results of existence and uniqueness of solutions are obtained for a class of quasi-variational inequalities modeling the free boundary problem for the determination of the depletion zone in reverse biased semiconductor diodes. The corresponding one (or two) obstacle implicit problems are solved by direct methods with weak regularity estimates for mixed boundary value elliptic problems of second order.
@article{urn:eudml:doc:44316,
title = {On a quasi-variational inequality arising in semiconductor theory.},
journal = {Revista Matem\'atica de la Universidad Complutense de Madrid},
volume = {5},
year = {1992},
pages = {137-151},
zbl = {0783.35086},
mrnumber = {MR1183429},
language = {en},
url = {http://dml.mathdoc.fr/item/urn:eudml:doc:44316}
}
Rodrigues, José-Francisco. On a quasi-variational inequality arising in semiconductor theory.. Revista Matemática de la Universidad Complutense de Madrid, Tome 5 (1992) pp. 137-151. http://gdmltest.u-ga.fr/item/urn:eudml:doc:44316/