We consider the multi-objective optimal dopant profiling of semiconductor devices.
The two objectives are to gain a higher on-state current while the off-state current is kept small. This
design question is treated as a constrained optimization problem, where the constraints are given
by the stationary drift-diffusion model for the on-state and the linearized drift-diffusion model for
the off-state. Using the doping profile as a state variable and the electrostatic potential as the new
design variable, we obtain a simpler optimization problem, whose Karush-Kuhn-Tucker conditions
partially decouple. Based on this observation we can construct a very efficient iterative optimization
algorithm, which avoids solving the fully coupled drift-diffusion system. Due to the simple structure of
the adjoint equations, this algorithm can be easily included into existing semiconductor simulation
tools. The efficiency and success of this multi-objective design approach is underlined by various
numerical examples.
@article{1229619681,
author = {Burger, M. and Pinnau, R. and Wolfram, M.-T.},
title = {On/off-state design of semiconductor doping models},
journal = {Commun. Math. Sci.},
volume = {6},
number = {1},
year = {2008},
pages = { 1021-1041},
language = {en},
url = {http://dml.mathdoc.fr/item/1229619681}
}
Burger, M.; Pinnau, R.; Wolfram, M.-T. On/off-state design of semiconductor doping models. Commun. Math. Sci., Tome 6 (2008) no. 1, pp. 1021-1041. http://gdmltest.u-ga.fr/item/1229619681/